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1

Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering

S. Abo, S. Ichihara, T. Lohner, F. Wakaya, T. Eimori, Y. Inoue, M. Takai

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 150 KB

english, 2005

2

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Vth-tunable CMIS platform with high-k gate dielectrics and variability effect for 45nm node

Hayashi,, Mizutani, M., Inoue, M., Yugami, J., Tsuchimoto, J., Anma, M., Komori, S., Tsukamoto, K., Tsukamoto, Y., Nii, K., Nishida, Y., Sayama, H., Yamashita, T., Oda, H., Eimori, T., Ohji, Y.

Year:

2005

Language:

english

File:

PDF, 857 KB

english, 2005

3

A simple freezing medium for serum-free cultured cells

Tadao Ohno, Kaoru Kurita, Shin-ichiro Abe, Naoko Eimori, Yoji Ikawa

Journal:

Year:

1988

Language:

english

File:

PDF, 211 KB

english, 1988

4

Suppression of Metamorphoses of Metal/High- k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors

Mise, Nobuyuki, Matsuki, Takeo, Watanabe, Toshinari, Morooka, Tetsu, Eimori, Takahisa, Nara, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

2008

File:

PDF, 703 KB

2008

5

[IEEE Extended Abstracts of the Third International Workshop on Junction Technology. IWJT - Tokyo, Japan (2002.12.3-2002.12.3)] Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. - 55nm gate CMOS technology using sub-keV ion implantation without through surface oxide

Sayama, H., Miyoshi, H., Kawasaki, Y., Ota, K., Oda, H., Kuroi, T., Eimori, T., Morimmo, H., Nakauka, H., Fuse, G., Nakanishi, K., Sebe, A., Kishimoto, T., Yamada, T., Kajiya, A., Mayumi, S.

Year:

2002

Language:

english

File:

PDF, 135 KB

english, 2002

6

Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude

Sonoda, K., Ishikawa, K., Eimori, T., Tsuchiya, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 413 KB

english, 2007

7

Nickel-chemical vapour-deposited diamond interface studied by electron energy loss spectroscopy

Eimori, N., Mori, Y., Moon, J., Hatta, A., Ma, J.S., Ito, T., Hiraki, A.

Journal:

Diamond and Related Materials

Year:

1993

Language:

english

File:

PDF, 440 KB

english, 1993

8

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

Sato, M., Umezawa, N., Shimokawa, J., Arimura, H., Sugino, S., Tachibana, A., Nakamura, M., Mise, N., Kamiyama, S., Morooka, T., Eimori, T., Shiraishi, K., Yamabe, K., Watanabe, H., Yamada, K., Aoyama

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

9

[Japan Soc. Appl. Phys Extended Abstracts of the Second International Workshop on Junction Technology - Tokyo, Japan (29-30 Nov. 2001)] Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) - Impact of STI stress on the junction characteristics

Shiozawa, K., Horita, K., Kuroi, T., Abe, Y., Eimori, T.

Year:

2001

Language:

english

File:

PDF, 237 KB

english, 2001

10

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Novel low offset voltage diode using asymmetric threshold voltage MONOS-FET for next generation devices demanding low voltage operation

Ueno, S., Furuta, H., Okumura, Y., Eimori, T., Inoue, Y.

Year:

2002

Language:

english

File:

PDF, 190 KB

english, 2002

11

Photoyield measurements of CVD diamond

Eimori, N., Mori, Y., Hatta, A., Ito, T., Hiraki, A.

Journal:

Diamond and Related Materials

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

12

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Novel locally strained channel technique for high performance 55nm CMOS

Ota, K., Sugihara, K., Sayama, H., Uchida, T., Oda, H., Eimori, T., Morimoto, H., Inoue, Y.

Year:

2002

Language:

english

File:

PDF, 222 KB

english, 2002

13

Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

Ishibashi, Masato, Horita, Katsuyuki, Sawada, Mahito, Kitazawa, Masashi, Igarashi, Motoshige, Kuroi, Takashi, Eimori, Takahisa, Kobayashi, Kiyoteru, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 158 KB

english, 2005

14

Extraction of gate-edge workfunction of metal gate and its impact on scaled MOSFETs

N. Mise, T. Matsuki, T. Watanabe, T. Eimori, Y. Nara

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 11.00 MB

english, 2007

15

A simple method forin situfreezing of anchorage-dependent cells including rat liver parenchymal cells

Tadao Ohno, Kaoru Saijo-Kurita, Naoko Miyamoto-Eimori, Tomoko Kurose, Yasunobu Aoki, Sigehiro Yosimura

Journal:

Year:

1991

Language:

english

File:

PDF, 340 KB

english, 1991

16

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Yamashita, T., Ota, K., Shiga, K., Hayashi, T., Umeda, H., Oda, H., Eimori, T., Inuishi, M., Ohji, Y., Eriguchi, K., Nakanishi, K., Nakaoka, H., Yamada, T., Nakamura, M., Miyanaga, I., Kajiya, A., Kub

Year:

2004

Language:

english

File:

PDF, 187 KB

english, 2004

17

[IEEE 2005 International Conference On Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2005.09.3-2005.09.3)] 2005 International Conference On Simulation of Semiconductor Processes and Devices - Compact Modeling of Source-Side Injection Programming for 9Onm-Node AG-AND Flash Memory

Sonoda, K., Narumi, S., Tanizawa, M., Ishikawa, K., Eimori, T., Ohji, Y., Kurata, H.

Year:

2005

Language:

english

File:

PDF, 617 KB

english, 2005

18

Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate

S. Satoh, T. Eimori, H. Matsumoto

Year:

1985

File:

PDF, 396 KB

1985

19

Disrupted Bone Metabolism in Long-Term Bedridden Patients

Eimori, Keiko, Endo, Naoto, Uchiyama, Seiji, Takahashi, Yoshinori, Kawashima, Hiroyuki, Watanabe, Kei, Hind, Karen

Journal:

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

20

[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

Sonoda, Ken'ichiro, Ishikawa, Kiyoshi, Eimori, Takahisa, Tsuchiya, Osamu

Year:

2006

Language:

english

File:

PDF, 3.83 MB

english, 2006

21

Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Hayashi, Takashi, Yamashita, Tomohiro, Shiga, Katsuya, Hayashi, Kiyoshi, Oda, Hidekazu, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 121 KB

english, 2005

22

Efeitos das deficiências de macronutrientes em duas variedades de soja (Glycine max (L.) Merr.), Santa rosa e UFV-1, cultivadas em solução nutritiva

Malavolta, E., Vidal, A.A., Gheller, A.C ., Fancelli, A.L., Kishimo, A.Y., Piza Jr., C. Toledo, Santos, D.B., Ruy, V.M., Faquimo, V., Eimori, I.E., Guimares, P.T.G., Ortiz, O.B., Vargas, P.G., Fornasi

Journal:

Anais da Escola Superior de Agricultura Luiz de Queiroz

Year:

1980

File:

PDF, 1.47 MB

1980

23

Electron emitter device of NEA diamond thin film

Akimitsu Hatta, Kenji Ogawa, Nobuhiro Eimori, Masahiro Deguchi, Makoto Kitabatake, Toshimichi Ito, Akio Hiraki

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 411 KB

english, 1997

24

[Japan Soc. Appl. Phys 1995 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (6-8 June 1995)] 1995 Symposium on VLSI Technology. Digest of Technical Papers - Leakage mechanism due to floating body and countermeasure on dynamic retention mode of SOI-DRAM

Morishita, F., Suma, K., Hirose, M., Tsuruda, T., Yamaguchi, Y., Eimori, T., Oashi, T., Arimoto, K., Inoue, Y., Nishimura, T.

Year:

1995

Language:

english

File:

PDF, 253 KB

english, 1995

25

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Fully planarized 0.5 mu m technologies for 16-Mb DRAM

Wakamiya, W., Eimori, T., Ozaki, H., Itoh, H., Fujiwara, K., Shibano, T., Miyatake, H., Fujii, A., Tsutsumi, T., Satoh, S., Katoh, T.

Year:

1988

File:

PDF, 417 KB

1988

26

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Single Metal/Dual High-k CMISFETs without High-k-induced Vth Variation by MgO or Al2O3 Incorporation

Mise, Nobuyuki, Morooka, Tetsu, Eimori, Takahisa, Ono, Tetsuo, Nara, Yasuo, Ohji, Yuzuru

Year:

2008

Language:

english

File:

PDF, 431 KB

english, 2008

27

Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3Incorporation and Stack Variation

N. Mise, M. Kadoshima, T. Morooka, T. Eimori, Y. Nara, Y. Ohji

Year:

2008

Language:

english

File:

PDF, 225 KB

english, 2008

28

Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films

Mori, Yusuke, Deguchi, Masahiro, Okada, Takashi, Eimori, Nobuhiro, Yagi, Hiromasa, Hatta, Akimitsu, Nishimura, Kazuhito, Kitabatake, Makoto, Ito, Toshimichi, Hirao, Takashi, Sasaki, Takatomo, Hiraki,

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 295 KB

english, 1993

29

[IEEE ICMTS 93 1993 International Conference on Microelectronic Test Structures - Sitges, Spain (22-25 March 1993)] ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures - Junction evaluation by time dependent degradation due to high constant voltage stressing (DRAMs)

Mitsuhashi, J., Komori, J., Eimori, T., Koyama, H.

Year:

1992

Language:

english

File:

PDF, 253 KB

english, 1992

30

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Inverse-Vg Dependence of PBTI Lifetime of HfSiON Gate Dielectrics Measured by a High-Temperature Pulsed-IV Method

Ootsuka, Fumio, Eimori, Takahia, Nara, Yasuo, Ohji, Yuzuru

Year:

2007

Language:

english

File:

PDF, 192 KB

english, 2007

31

Lighting installation of Toyama prefectural athletic field

Suzuki, Hisayosi, Kinosita, Seiiti, Eimori, Syuichi, Ohyama, Takashi, Sanada, Mineo

Year:

1995

File:

PDF, 1.97 MB

1995

32

Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak

Nishida, Yukio, Ueno, Shuichi, Uchida, Tetsuya, Eikyu, Katsumi, Kinugasa, Akinori, Terauchi, Takashi, Tsunomura, Takaaki, Takeuchi, Masahiko, Shirahata, Masayoshi, Eimori, Takahisa, Inoue, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

33

Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Matsuki, Takeo, Inumiya, Seiji, Mise, Nobuyuki, Eimori, Takahisa, Nara, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 163 KB

english, 2007

34

First report of Helleborus net necrosis virus isolated from hellebores with black death syndrome in Japan

Takuya Shiraishi, Hideo Hoshi, Koki Eimori, Takeshi Kawanishi, Ken Komatsu, Masayoshi Hashimoto, Kensaku Maejima, Yasuyuki Yamaji, Shigetou Namba

Journal:

Journal of General Plant Pathology

Year:

2011

Language:

english

File:

PDF, 274 KB

english, 2011

35

[IEEE ICMTS 2005. 2005 International Conference on Microelectronic Test Structures - Leuven, Belgium (4-7 April 2005)] Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005. - A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

Okagaki, T., Tanizawa, M., Fujinaga, M., Kunikiyo, T., Yuki, H., Ishikawa, K., Nishikawa, Y., Eimori, T., Inuishi, M., Oji, Y.

Year:

2005

Language:

english

File:

PDF, 585 KB

english, 2005

36

[IEEE 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers - San Francisco, CA, USA (6-8 Feb. 1997)] 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers - A 1 V 46 ns 16 Mb SOI-DRAM with body control technique

Shimomura, K., Shimano, H., Okuda, F., Sakashita, N., Oashi, T., Yamaguchi, Y., Eimori, T., Inuishi, M., Arimoto, K., Maegawa, S., Inoue, Y., Nishimura, T., Komori, S., Kyuma, K., Yasuoka, A., Abe, H.

Year:

1997

Language:

english

File:

PDF, 1.32 MB

english, 1997

37

Analog design optimization methodology for ultralow-power circuits using intuitive inversion-level and saturation-level parameters

Eimori, Takahisa, Anami, Kenji, Yoshimatsu, Norifumi, Hasebe, Tetsuya, Murakami, Kazuaki

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.30 MB

english, 2014

38

Estudos sobre o efeito de doses crescentes de cloreto na soja (Glycine max (L.) Merr.) em solução nutritiva: I. crescimento e produção

Malavolta, E., Freire, F. Morel, Casagrande, J.C., Nakayama, L.I., Eimori, I., Castillo, J.A.B.

Journal:

Anais da Escola Superior de Agricultura Luiz de Queiroz

Year:

1980

File:

PDF, 1.44 MB

1980

39

Characterizations of metal/CVD diamond interface formation

Y. Mori, N. Eimori, J.S. Ma, T. Ito, A. Hiraki

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 220 KB

english, 1992

40

Proposal of Single Metal/Dual High- Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Mise, N., Morooka, T., Eimori, T., Ono, T., Sato, M., Kamiyama, S., Nara, Y., Ohji, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.00 MB

english, 2009

41

An experimental 256-Mb DRAM with boosted sense-ground scheme

Asakura, M., Ooishi, T., Tsukude, M., Tomishima, S., Eimori, T., Hidaka, H., Ohno, Y., Arimoto, K., Fujishima, K., Nishimura, T., Yoshihara, T.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1994

Language:

english

File:

PDF, 655 KB

english, 1994

42

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Single Metal/Dual High-k Gate Stack with Low Vth and Precise Gate Profile Control for Highly Manufacturable Aggressively Scaled CMISFETs

Mise, N., Morooka, T., Eimori, T., Kamiyama, S., Murayama, K., Sato, M., Ono, T., Nara, Y., Ohji, Y.

Year:

2007

Language:

english

File:

PDF, 3.51 MB

english, 2007

43

[IEEE 2005 International Conference On Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2005.09.3-2005.09.3)] 2005 International Conference On Simulation of Semiconductor Processes and Devices - Simulation of Drain Current Reduction Caused by Process-Induced Stress

Uchida, T., Takashino, H., Tanizawa, M., Okagaki, T., Ishikawa, K., Eimori, T., Ohji, Y.

Year:

2005

Language:

english

File:

PDF, 1.69 MB

english, 2005

44

Aluminum tolerance in sorghum and bean ‐ methods and results

Malavolta, E., Nogueira, F. D., Oliveira, I. P., Nakayama, L., Eimori, I.

Journal:

Journal of Plant Nutrition

Year:

1981

Language:

english

File:

PDF, 319 KB

english, 1981

45

[IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (11-13 June 2002)] 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) - A novel bi-layer cobalt silicide process with nitrogen implantation for sub-50 nm CMOS and beyond

Itonaga, K., Eriguchi, K., Miyanaga, I., Kajiya, A., Ogura, M., Tsutsumi, T., Sayama, H., Oda, H., Eimori, T., Morimoto, H.

Year:

2002

Language:

english

File:

PDF, 255 KB

english, 2002

46

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- FETs

Ootsuka, F., Katakami, A., Shirai, K., Watanabe, T., Nakata, H., Kitajima, M., Aoyama, T., Eimori, T., Nara, Y., Ohji, Y., Tanjyo, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 918 KB

english, 2008

47

[IEEE kshop on Junction Technology - Osaka, Japan (2005.06.7-2005.06.8)] Extended Abstracts of the Fifth International Workshop on Junction Technology - Advantages of B/sub 18/H/sub 22/ ion implantation and influence on PMOS reliability

Ishibashi, M., Kawasaki, Y., Horita, K., Kuroi, T., Yamashita, T., Shiga, K., Hayashi, T., Togawa, M., Eimori, T., Ohji, Y.

Year:

2005

Language:

english

File:

PDF, 1.44 MB

english, 2005

48

An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology

Suma, K., Tsuruda, T., Hidaka, H., Eimori, T., Oashi, T., Yamaguchi, Y., Iwamatsu, T., Hirose, M., Morishita, F., Arimoto, K., Fujishima, K., Inoue, Y., Nishimura, T., Yoshihara, T.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1994

Language:

english

File:

PDF, 784 KB

english, 1994

49

[IEEE 1994 VLSI Technology Symposium - Honolulu, HI, USA (7-9 June 1994)] Proceedings of 1994 VLSI Technology Symposium - A memory cell capacitor with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) film for advanced DRAMs

Ohno, Y., Horikawa, T., Shinkawata, H., Kashihara, K., Kuroiwa, T., Okudaira, T., Hashizume, Y., Fukumoto, K., Eimori, T., Shibano, T., Arimoto, K., Itoh, H., Nishimura, T., Miyoshi, H.

Year:

1994

Language:

english

File:

PDF, 187 KB

english, 1994

50

Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al 2 O 3 -Capped HfO 2 Dielectrics by Controlling Al 2 O 3 Diffusion Annealing Process

Morooka, Tetsu, Matsuki, Takeo, Mise, Nobuyuki, Kamiyama, Satoshi, Nabatame, Toshihide, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

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